Integrated device including a single channel high speed driver and a enhanced GaN transistor

650 V enhancement mode power switch RDS(on) =200mΩ IDS(max) = 10A Easy gate drive requirements (0 V to 6 V)

DFN5*6

Dual Channel 3.0KVRMS/5.0KVRMS Isolated Gate Driver

 4.0A peak source current & 6.0A peak sink current  40ns (Typ.) propagation delay  10ns (Max.) pulse width distortion & 10ns (Max.) channel delay matching  100kV/us (Min.) common mode transient immunity (CMTI)  Wide input voltage: 3V to 18V  Up to 25V driver output voltage  5V reverse polarity voltage handling capability on input stage  Operating temperature: –40°C to +125°C

SOP14W/SOP16W/SOP16